深圳市星佻光電有限公司
江門市盈鑫光電器材廠
Shenzhen xing zhao eiectroni Co., Ltd.
Model No：1P140IR2E
Features
u High radiant intensity
u Peak welength:λp=850nm
u High reliability
Package Dimension:
Model No. | Chip Material | Lens Color | Source Color |
1P140IR2E | GaAlAs | Water clear | Infrared |
Notes:
Absolute Maximum Ratings at Ta=25℃
Parameter | Symbol | MAX | Unit |
Power Dissipation at(or below) 25℃free air temperature | Pd | 3 | W |
Peak Forward Current (Pulse width=100μs tp/T=0.01) | IFP | 1000 | mA |
Continuous Forward Current | IF | 750 | mA |
Reverse Voltage | VR | 5 | V |
Operating Temperature Range | Topr | -25℃to +50℃ | |
StorageTemperature Range | Tstg | -25℃to +85℃ | |
Lead Soldering Temperature (4mm From Body) | Tsol | 260℃for 5 seconds | |
Electrical Optical Characteristics at Ta=25℃
Parameter | Symbol | Min. | T. | Max. | Unit | Test Condition |
Radiant Intensity | Ee | 2.5 | 3 | ----- | Mw/sr | IF=750mA |
Viewing Angle | 2θ1/2 | ---- | 70 | ----- | Deg |
|
Peak Emission Welength | λp | ---- | 850 | ---- | nm | IF=750mA |
Spectral Line Half-Width | Δλ | ---- | 50 | ---- | nm | IF=750mA |
Forward Voltage | VF | 1.70 | --- | 2.00 | V | IF=750mA |
Reverse Current | IR | ---- | ---- | 10 | μA | VR=5V |
