N-Channel Enhancement Mode Field Effect Transistor
Features
VDS (V) = 30V
ID = 5.0 A
RDS(ON) < 28mΩ (VGS = 10V)
RDS(ON) < 33mΩ (VGS = 4.5V)
RDS(ON) < 42mΩ (VGS = 2.5V)


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N-Channel Enhancement Mode Field Effect Transistor
Features
VDS (V) = 30V
ID = 5.0 A
RDS(ON) < 28mΩ (VGS = 10V)
RDS(ON) < 33mΩ (VGS = 4.5V)
RDS(ON) < 42mΩ (VGS = 2.5V)

