描述：
a3212的集成電路是一種靈敏,點霍爾效應(yīng)開關(guān)鎖存數(shù)字輸出. 這種傳感器,尤其適合運行在電池操作,手持設(shè)備如蜂窩,無繩電話,傳呼機,和掌上電腦. 2.5伏特至3.5伏特的操作和的頻計劃降低平均營運電力需求較少過15µW的2.75伏特的供應(yīng).
不像其他霍爾效應(yīng)開關(guān),無論是南北的實力將輸出;在沒有磁場時,輸出關(guān)閉. 性性和小功率要求,讓這些設(shè)備能輕易取代簧片開關(guān)優(yōu)良的性和制造業(yè),同時消除要求信號調(diào)理.
改進的穩(wěn)定性是可以通過斬波穩(wěn)定(動態(tài)抵消取消),減少殘余失調(diào)電壓通常會造成設(shè)備overmolding,依賴溫度和熱應(yīng)力.
這種裝置包括在單一晶片的霍爾電壓發(fā)生器,小信號放大器,斬波穩(wěn)定,鎖存器,和MOSFET輸出. 的BiCMOS處理是用于利用低電壓和低功耗的要求,部件匹配,低的輸入偏置誤差,和小構(gòu)件幾何.
格包裝磁提供優(yōu)決大多數(shù)應(yīng)用. 迷你低調(diào)表面摩包類型和El(0.75和0.50毫米的高度象征),無鉛,LH的是含鉛低調(diào)D型,及UA是一個為期導(dǎo)致SIP的通孔安裝. 每個包現(xiàn)已有鉛(Pb)的版本(后綴-T)與100%電鍍錫引線. 厄爾尼諾包裝有限釋放,工程樣本資料.

A3211 and A3212
Micropower, Ultrasensitive Hall-Effect Switches

Features

• Micropower operation
• Operate with north or south pole
• 2.5 to 3.5 V battery operation
• Chopper stabilized
  • ior temperature stability
  • Extremely low switch-point drift
  • Insensitive to physical stress
• Solid-state reliability
• all size
• Easily manufacturable with magnet pole independence

Description

The A3211 and A3212 integrated circuits are ultrasensitive, pole independent Hall-effect switches with latched dial output. These devices are especially suited for operation in battery-operated, hand-held equipment such as cellular and cordless telephones, pagers, and palm computers. A 2.5 to 3.5 V operation and a unique clocking scheme reduce the average operating power requirements to less than 15 µW with a 2.75 V supply.

Unlike other Hall-effect switches, either a northorsouth pole of sufficient strength will turn the output on in the A3212, and in the absence of a magnetic field, the output is off. The A3211 provides an inverted output. The polarity independence and minimal power requirements allow these devices to easily replace reed switches for ior reliability and ease of manufacturing, while eliminating the requirement for signal conditioning.

Improved stability is made possible through chopper stabilization (dynamic offset cancellation), which reduces the residual offset voltage normally caused by device overmolding, temperature dependencies, and thermal stress.

This device includes on a single silicon chip a Hall-voltage generator, all-signal amplifier, chopper stabilization, a latch, and a MOSFET output. Advanced CMOS processing is used to take advantage of low-voltage and low-power requirements, component matching, very low input-offset errors, and all component geometries.

Four package styles provide magnetically optimized solutions for most applications. Miniature low-profile surface-mount package tes EH and EL (0.75 and 0.50 mm nominal height) are leadless, LH is a 3-pin low-profile D, and UA is a three-pin SIP for through-hole mounting. Packages are lead (Pb) free (suffix, –T) with 100% matte tin plated leadframes.

完整型號:

A3212EEHLT-T  封裝：6-lead MLP

A3212EELLT-T  封裝：3-lead MLP

A3212ELHLT-T  封裝：3-lead SOT

A3212EUA-T    封裝：3-pin SIP