1N5400-1N5408
Discrete POWER & Signal Techlogi
1N5400 - 1N5408
Featur * * *
3.0 ampere operation at TA = 75C with thermal runaway. High current capability. Low leakage.
1.0 min (25.4)
Dimensions in inch (mm)
DO-201AD
COLOR BAND DET CATHODE
0.375 (9.53) 0.285 (7.24)
0.210 (5.33) 0.190 (4.83) 0.052 (1.32) 0.048 (1.22)
3.0 Ampere General Purpose Reifiers
Absolute Maximum Ratings*
Syol
IO if(surge) PD RJA Tstg TJ
TA = 25C unls otherwise ted
Parameter
erage Reified Current .375 " lead length @ TA = 75C Peak Forward Surge Current 8.3 ms single half-sine-we Superimposed on rated load (JEDEC method) Total Device Dissipation Derate above 25C Thermal Ristance, Junion to Aent Storage Temperature Range Operating Junion Temperature
Value
3.0
Units
A
200 6.25 50 20 -55 to +150 -55 to +150
A W mW/C C/W C C
*The ratings are limiting valu above which the serviceability of any semiconduor device may be impaired.
Elerical Charaeristics
Parameter
5400 Peak Repetitive Reverse Voltage Maximum RMS Voltage DC Reverse Voltage (Rated VR) Maximum Reverse Current @ rated VR TA = 25C TA = 100C Maximum Forward Voltage @ 3.0 A Maximum Full Load Reverse Current, Full Cycle TA = 105C Tical Junion Capacitance VR = 4.0 V, f = 1.0 MHz 50 35 50
TA = 25C unls otherwise ted
Device
.0 500 1.2 0. 1000
Units
V V V A A V mA pF
a 1998 Fairchild Semiconduor Corporation
1N5400-1N5408
General Purpose Reifiers
(continued)
Tical Charaeristics
Forward Current Derating Curve
4 FORWARD CURRENT (A)
Forward Charaeristics
100 FORWARD CURRENT (A)
3
9.5mm LEAD LENGTH
10 5 1
2
T J = 25C Pulse Width = 200S 1% Duty Cycle
1
0.1
0 25
50
75 1075 AENT TEMPERATURE (  C)
200
0.01 0.4
0.6
0.8 1 1.2 1.4 FORWARD VOLTAGE (V)
1.6
1.8
Overload Surge Current
200 FORWARD SURGE CURRENT (A) REVERSE CURRENT (  A) 100
Reverse Charaeristics
160
10
120
80
T A = 105  C
1
TA = 25 C
40
0
1
2
5 10 20 50 NUER OF CYCL AT 60Hz
100
0.1
0
20 40 60 80 100 120 RMALIZED REVERSE VOLTAGE (%)
140
Junion Capacitance
100 50 CAPACITANCE (pF)
10 5
1 0.1
1 5 10 REVERSE VOLTAGE (V)